Our mission is to add value to our Foundry Partners and deliver total Customer Satisfaction in a successful Business

-- MISSION --

Our vision is to become the best Specialty Foundry Partner for Quality, Value and Customer Satisfaction

-- VISION --

TELEFUNKEN Semiconductor processes allow us to offer outstanding Specialty Foundry Services for RF, Power Management, High Voltage, High Temperature, Automotive, Industrial, Consumer and Aerospace Applications. We are an open Gateway for Customer Development Technology Applications

-- TECHNOLOGY --

Our mission is to add value to our Foundry Partners and deliver total Customer Satisfaction in a successful Business

-- MISSION --

Our vision is to become the best Specialty Foundry Partner for Quality, Value and Customer Satisfaction

-- VISION --

TELEFUNKEN Semiconductor processes allow us to offer outstanding Specialty Foundry Services for RF, Power Management, High Voltage, High Temperature, Automotive, Industrial, Consumer and Aerospace Applications. We are an open Gateway for Customer Development Technology Applications

-- TECHNOLOGY --

Our mission is to add value to our Foundry Partners and deliver total Customer Satisfaction in a successful Business

-- MISSION --

Our vision is to become the best Specialty Foundry Partner for Quality, Value and Customer Satisfaction

-- VISION --

TELEFUNKEN Semiconductor processes allow us to offer outstanding Specialty Foundry Services for RF, Power Management, High Voltage, High Temperature, Automotive, Industrial, Consumer and Aerospace Applications. We are an open Gateway for Customer Development Technology Applications

-- TECHNOLOGY --

Our mission is to add value to our Foundry Partners and deliver total Customer Satisfaction in a successful Business

-- MISSION --

Our vision is to become the best Specialty Foundry Partner for Quality, Value and Customer Satisfaction

-- VISION --

TELEFUNKEN Semiconductor processes allow us to offer outstanding Specialty Foundry Services for RF, Power Management, High Voltage, High Temperature, Automotive, Industrial, Consumer and Aerospace Applications. We are an open Gateway for Customer Development Technology Applications

-- TECHNOLOGY --

TSHSA: 0.35 micron high voltage complementary bipolar on SOI for high linearity applications

 

TSHSA is a high voltage, high speed, double polysilicon self-aligned, trench isolated, complementary bipolar process on SOI providing vertically integrated PNP, polysilicon resistors, MIS and MIM capacitors and TiSi Schottky diodes.

 

Advantages of TSHSA

 

  • reduced substrate coupling and higher noise immunity
  • reduced chip size
  • Enhanced integration density
  • reduced parasitic capacitances
  • no latch up possible due to SOI

 

Technology Description

 

TSHSA is a feature-rich HV Bipolar process suitable for linear applications, op-amps, high speed serial and DSL drivers and industrial applications

 

  • Low substrate capacitance
  • MIM Capacitors: 0.5 fF/µm2  @ 7 V (optional)
  • MIS Capacitors: 1.0 fF/ µm2  @ 20 V  (optional)
  • Schottky Diodes, Zener Diodes
  • High and low-value poly-Si resistors
  • vertical npn with fT = 7.5 GHz
  • vertical pnp with fT = 8.5 GHz
  • Two level or three level metal option

 

Typical Application

 

  • High speed low power mixed signal
  • High speed video amplifiers
  • ADSL Drivers
  • High Speed amplifiers
  • Laser Diode Drivers for DVD
  • Cable Modems

 

Technological Parameter

 

Characteristic

Details

minimum size

0.6 µm

min. effective emitter width

0.35 µm

substrate

SOI ; n-type handle wafer <100> ; 6 inch

isolation

deep trench (DTI)

metal 1 pitch

2.4 µm

metal 2 pitch

2.4 µm

metal 3 pitch

5.0 µm

metallization

2 or 3 level AlSiCu

via pitch VA / VB

4 µm / 5 µm

min. via size VA / VB

2 µm / 2 µm

mask levels

22-28

 

Electrical Parameter

 

Vertical NPN (0.6 µm x 4 μm, CBEB)

Parameter

Condition

Value

Units

fT

IC = 150 µA  ; VCE = 2.0 V

7.5

GHz

HFE

IC = 10 μA  ; VCE = 2.0 V

170

 

VA

IC = 150 µA  ; VCE = 2.0 V

115

V

VCEO

IC = 10 μA, VE = 0 V

> 12

V

VCBO

IC = 1 μA, VB = 0 V

> 31

V

 

Vertical PNP (0.6 µm x 4 μm, CBEB)

Parameter

Condition

Value

Units

fT

Ic = 200 μA  ; VCE = 2.0 V

8.5

GHz

HFE

IC = 10 μA  ; VCE = 2.0 V

55

 

VA

IC = 200 μA  ; VCE = 2.0 V

70

V

VCEO

IC = 10 μA, VE = 0 V

> 12

V

VCBO

IC = 1 μA, VB = 0 V

> 20

V

 

RESISTOR VALUES

Type

Value

Units

low n poly

110

W/sq

low p poly

155

W/sq

high p poly

1400

W/sq

metal 1

58

mW/sq

metal 2

33

mW/sq

metal 3

19

mW/sq

 

CAPACITOR VALUES

Type

Value

Units

MIS capacitor

1.0

fF/µm²

MIM capacitor

0.5

fF/µm²

 

News

 

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Read More About This Feature...

 

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TFBCD080-HV Process

The TFBCD080-HV process is a 0.8 µm Very High Voltage BCDMOS Technology. The process combines a very high voltage capability with high integration density, low RDSon and as well digital as analog capabilities.
Read More About TFBCD080-HV...

 

TFSmart2

TFSmart 2

TFSMART 2 is the second generation technology of TFSMART 2 using HV BCD on SOI with the smaller feature size of 0.35 µm.The advantages of the TFSMART 2 SOI-technology compared to conventional bulk technologies with double-diffused bodies are the future of new technology opportunities.
Read More About TFSmart2...

 

Heilbronn/Germany