High Quality Silicon Epitaxy

TELEFUNKEN Semiconductors offers state-of-the-art Silicon Epi layer deposition for Bipolar, CMOS and BCDMOS applications based on long term experience. The substrate wafers containing Boron, Phosphorus, Antimony or Arsenic doped buried layers will be covered by a monocrystalline Silicon layer with a defined layer thickness and dopant level within the specification range.

The Epitaxial process is tuned to minimize Auto doping for a sharp dopant transition between buried and Epi layer.

Additionally, epitaxial Silicon deposition onto SOI wafers to increase the top Si thickness or to smooth out intrinsic COP defects on the wafer surface is an option.

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