TELEFUNKEN Semiconductors Foundry Business
World Class Analog & Mixed Signal Foundry Services for RF, Power Management, High Voltage and High Temperature Automotive Applications.
TELEFUNKEN Semiconductors' experienced engineering team excels at installing custom tailored processes to meet our customers' requirements in Analog & Mixed Signal applications. The complete array of services furnished by TELEFUNKEN Semiconductors can take any set of specifications and create a totaly transparent turnkey solution, from developing a chipset to shipping fully qualified and packaged product world wide.
TELEFUNKEN Semiconductors FOUNDRY TECHNOLOGY
SiGe: SiGe is 0.8 µm minimum feature sized BIPOLAR TECHNOLOGY that allows applications in high-speed cellular, high-speed networking, Wireless LAN and high performance standard RF devices. SiGe 1 SiGe 2
TSBCD: TSBCD process is a 0.35 µm BIPOLAR CMOS DMOS TECHNOLOGY (BCD) up to 80V on Bulk Siclicon material. The preocess combines high integration desity 3V and 5V logic with high voltage analy capability and low RDSon. Optionally 5 V MOS devices with low threshold voltage and a second poly layer are available. It is used for LAN Switches, amplifiers and Line Drivers.
TFSMART: TFSMART is HV BCD TECHNOLOGY on SOI (SILICON ON INSULATOR) and is the fastest growing technology in production for the Foundry Business. TS offers 0.8 µm technology qualified up to 200 degrees and as second generation 0.35 µm with the option of 200V breakdown voltage. This technology is aplicable for Automotive applications, Sensor Interfaces and Power Management. TFSMART 1 TFSMART 2
TSHSA: TSHSA is 0.6 µm COMPLEMTARY SOI RF BIPOLAR PROCESS with breakdown voltage of 12V and fT of 7.5 GHz. This process is suitable for linear applications, DSL Drivers and Industrial Applications.
TSHSB: TSHSB is a 26V/ 5GHz/0.6µm COMPLEMENTARY SOI BIPOLAR PROCESS . TSHSB is used for typical applications for High Speed amplifier, SLIC, xDSL and cable modems. LEARN MORE ABOUT TSHJV
UHF6S: UHF6S is a 0.8 µm process combining double- poly BIPOLAR TECHNOLOGY with an optional 0.8 µm CMOS module enabling superior applications and Customer-Specific Solutions such as RF control circuits in the 315 MHz-900 MHz ISM bands with industry-leading edge sleep current of typically less than 1 nA, laser driver circuits for CD/DVD.
TS700V: TS700V is a 0.8 µm very HIGH VOLTAGE BCDMOS TECHNOLOGY providing customers a unique opportunity to offer products in the rapidly growing high voltage segment for consumer applications, such as electric vehicles, green energy, household electronics, etc.