TELEFUNKEN Semiconductors reached a significant milestone with SiGe power HBT
TELEFUNKEN Semiconductors announced today that they have achieved a run rate of >100 million units per year supply to their customers of high performance SiGe power ICs utilizing HBT technology. This is a significant milestone in Foundry business and validates excellent features of TELEFUNKEN’s low cost SiGe power HBT technology in comparison to high cost III-V-based (GaAs, InP, GaN) HEMT technology and market acceptance and market share gains of their technology.
TELEFUNKEN Semiconductors’ SiGe HBT process is in manufacturing in Heilbronn, Germany, since 1998. With SiGe PDKs, TS customers are able to design high performance integrated circuits with analog frequencies up to 80 GHz and sufficient power capability. Telefunken Semiconductors offers world class HICUM models for HBTs with Monte-Carlo-Simulations based on production statistics. The cost efficient high speed SiGe power technology is eminently well-suited for applications in the area of telecommunications and high-speed data transfer such as DECT™, CDMA, 5.8-GHz WLAN and power amplifier (WCDMA, 802.11, Bluetooth range extension, etc.
A volume of 100 million units per year demonstrates the manufacturing capabilities of Telefunken Semiconductors and acceptance of SiGe as the industry standard for wireless amplification.